📄 Abstract
The dependence of the transmission coefficient for an electron with energy E tunneling through a potential barrier of finite height and thickness in a two-barrier semiconductor structure is calculated, and it is shown that this dependence has an oscillatory character. On the basis of the continuity equation, the energy dependence of the frequency of electron collisions with the walls of the size-quantized potential is analyzed.
🏷️ Keywords
📚 How to Cite:
Voxob Rustamovich Rasulov, Rustam Yavkachovich Rasulov, Mamatova Mahliyo Adhamovna, Nurillo Ubaydullo o'g'li Kodirov , ELECTRONIC PROPERTIES OF A SEMICONDUCTOR TWO-BARRIER STRUCTURE , Volume 8 , Issue 5, may 2022, EPRA International Journal of Multidisciplinary Research (IJMR) , DOI: https://doi.org/10.36713/epra10152