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THEORY OF THE CURRENT-VOLTAGE CHARACTERISTIC OF A THREE-LAYER SEMICONDUCTOR DIODE UNDER THE ACTION OF AN ELECTRIC FIELD

📘 Volume 8 📄 Issue 6 📅 june 2022

👤 Authors

Voxob Rustamovich Rasulov,Rustam Yavkachovich Rasulov,Mamatova Mahliyo Adhamovna, XudoyberdiyevaMuhayyoxon Zoirjon qizi 1
1. doctor, Physics, Fergana State University

📄 Abstract

The current-voltage characteristic of a long three-layer semiconductor diode of the type: pâ??nâ??n, pâ??nâ??p, nâ??nâ??n, etc. has been calculated. Expressions are obtained for the current-voltage characteristic of a three-layer semiconductor structure, the base of which is made of a compensated semiconductor, taking into account the strength of the external electric field. It is shown that due to the presence of zero, minus and plus charged impurities in a compensated semiconductor, the dependence of the concentration of electrons and holes is non-linear.

🏷️ Keywords

current-voltage characteristic semiconductor structure electrons and holes.

🔗 DOI

View DOI - (https://doi.org/10.36713/epra10584)

📚 How to Cite:

Voxob Rustamovich Rasulov,Rustam Yavkachovich Rasulov,Mamatova Mahliyo Adhamovna, XudoyberdiyevaMuhayyoxon Zoirjon qizi , THEORY OF THE CURRENT-VOLTAGE CHARACTERISTIC OF A THREE-LAYER SEMICONDUCTOR DIODE UNDER THE ACTION OF AN ELECTRIC FIELD , Volume 8 , Issue 6, june 2022, EPRA International Journal of Multidisciplinary Research (IJMR) , DOI: https://doi.org/10.36713/epra10584

🔗 PDF URL

https://cdn.eprapublishing.org/article/942pm_45.EPRA JOURNALS 10584.pdf

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